Griffith team develops breakthrough silicon carbide transistor

Researchers at Griffith University have developed a device that can cut ‘parasitic losses’ on semiconductors that drained energy and limited performance.

The power semiconductor team, led by Dr Daniel Haasmann alongside Professor Sima Dimitrijev and Dr Philip Tanner created a proof-of-concept device for next-generation silicon carbide power transistors, aimed at revolutionising energy conversion systems.

The development comes as the industry faces increasing pressure to move beyond traditional silicon-based devices, which are approaching their physical limits after five decades of development.

“The device will eliminate the parasitic loses that have long plagued the sector and, in doing so, we are not only set to deliver a market leading device, but the new, simple fabrication process will represent a paradigm shift in the billion-dollar semiconductor manufacturing industry,” said Haasmann.

These parasitic losses are often unintended energy losses caused by small differences between components, or inductances in the wiring, with energy being dissipated in this parts instead of where they should.

The team has filed a provisional patent application and is working towards a functional prototype with support from an Australia’s Economic Accelerator Seed grant.

Power semiconductor start-up Silvertech has partnered with the research team to commercialise the technology. Silvertech Director Rowan Gilmore said the technology could meet growing demand from electric vehicles, public transport electrification and renewable energy power inverters.

The project aims to strengthen Australia’s sovereign capability in semiconductor technology while creating local high-value jobs. When completed, the transistor technology could enable innovations in renewable energy power systems, ultra-fast EV charging and extended range electric vehicles.

Picture: AEA website